Infineon Technologies AG and Wolfspeed Inc. have signed a multi-year agreement for 200mm silicon carbide (SiC) wafers, moving their existing supply arrangement from 150mm substrates to the larger wafer format. The agreement supports Infineon’s transition to 200mm SiC manufacturing and expands its substrate supply base. The company produces SiC power semiconductors for applications including electric vehicles, renewable energy systems and data center power infrastructure. “Silicon carbide is at the heart of the energy transition, and securing a high-quality, resilient supply of 200-millimeter substrates is essential to delivering on our customers’ long-term commitments,” said Alexander Gorski, Chief Operations Officer at Infineon, in a press statement. “This agreement further broadens our strong supply base for our 200-millimeter high-volume manufacturing, building on a 20-year supply relationship between our two companies. It strengthens supply chain security for our customers and provides additional flexibility and scalability to support Infineon’s future growth.” Alexander Gorski, Chief Operations Officer, Infineon Technologies. Demand for SiC power devices is also expanding into AI data centers, where power conversion efficiency affects operating costs. SiC’s switching efficiency and thermal performance make it suitable for certain power conversion stages, alongside established applications in EV drivetrains, solar inverters and industrial motor drives. Moving from 150mm to 200mm wafers increases the available die area per wafer and can reduce substrate costs per device. Infineon uses multiple SiC substrate suppliers to maintain sourcing flexibility across its manufacturing network. Its 200mm SiC fab in Kulim, Malaysia, is part of this manufacturing expansion. Infineon has described the facility as designed to become the world’s largest and most competitive SiC manufacturing site. The post Infineon and Wolfspeed Ink Multi-year 200mm SiC Wafer Supply Deal appeared first on EE Times Asia .