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按发布时间排序GaNPower Launches Generation-II P2P™ GaN Technology
GaNPower International is pleased to announce the successful development of its Generation-II P2P™ (Pin-to-Pin Compatible) GaN technology, representin…
08-05 04:33
GaNPower releases MOSFET Pin-to-Pin Compatible E-mode GaN in TO220FP
Using innovative all-GaN-IC e-mode GaN technology, GaNPower is pleased to release a series of e-mode GaN that is pin-to-pin compatible with...
05-06 05:37
GaNPower Launches High-Performance GaN Half-Bridge Power IC Series
GaNPower is pleased to announce a series of high performance half-bridge power IC based on e-mode GaN integrated with all-GaN-IC and...
04-22 00:55
GaNPower International announces Foundry Transition to Support Continued Growth
GaNPower International is pleased to inform that to continue our success in GaN power device design, our wafer fabrication has been transferred from T…
02-10 05:53
GaNPower Releasing 1200V/25mOhm/60A EMODE GaNFET
GaNPower is pleased to demonstrate (engineering stage) of 1200V/25mOhm/60A EMODE GaNFET power switch based on all-GaN-IC and smart packaging. Protecte…
07-25 02:40
GaNPower 120A All-GaN-IC Power Switch Shows Great Performance Against SiC
GaNPower is pleased to report that recent dynamic testing of its 900V/120A (12mOhm) power switch shows great promise against similar SiC...
07-24 01:23
Aging characteristics of GanPower devices: HTOL high temperature aging test
by Tektronix Advanced Semiconductor Laboratory To more thoroughly assess the aging characteristics of power devices, high-temperature operating life (…
06-04 05:25
The Release of Upgraded 1200V E-Mode GaN Device
GaNPower is pleased to announce the release of an upgraded version of its 1200V emode GaN packaged as TO247-4. At a...
05-24 11:52
Demonstration of parallelization capability of Bluesky120
GaNPower is pleased to announce the successful demonstration of parallelization capability of Bluesky120 (bare die of EMODE GaNFET/IC with rating of..…
02-08 03:23
GaNPower new bare die at 900V 120A/12 mOhm rating
We are pleased to offer a new bare die at 900V 120A/12 mOhm rating. Full chip probe has been performed and...
01-10 07:56