GaNPower is pleased to report that recent dynamic testing of its 900V/120A (12mOhm) power switch shows great promise against similar SiC for high power/current applications. A common parameter for application engineer to compare is the switching loss at turn off (Eoff). A small Eoff is a good indication of low switching loss without concern of Electromagnetic interference (EMI) in power systems. In similar conditions of about 400V/100A switching, GaNPower’s Star120 Eoff (in TO247-4) is less than 1/2 of that of SiC (see table below). This Eoff can be further lowered with driver optimization. On a separate positive note, we have successfully demonstrated driving 6 Star120 in parallel generating 360A or above amount of current. Features of Star120 all-GaN-IC power switch: GaNPower innovative all-GaN-IC enables 3.8V turn-on voltage and +/-20 V regulated gate driving. Enhanced system reliability and compatibility with conventional gate drivers. Regulated gate driving enables anti-ringing protection / ESD protection . Lossless source side current sensing. DUT Transient Ton/off (ns) Trise/fall (ns) Ton/off (ns) Eoff (uJ) Load Star120 Vg=-3.3/12 Rg=2 Ohm Turn-off 25 13 37 157 400V 99A IMZA65R010M2H Vg=0/18 Rg=3.3 Ohm From DS Turn-off 30 9 39 371 400V 92A