DIGITIMES Insight: TSMC, ASML's 2031 photomask target puts High NA EUV suppliers on the clock

ASML and TSMC announced plans in September 2026, ahead of the SPIE BACUS symposium, to advance high-numerical-aperture extreme ultraviolet (High NA EUV) lithography by replacing the decades-old 6-inch photomask format with larger 12-inch masks. TSMC plans to introduce High NA EUV into advanced-node volume production from 2030, establish a 12-inch mask pilot line and begin production-line and ecosystem qualification by 2031, and achieve full readiness for 12-inch-mask High NA EUV systems supporting advanced-node manufacturing by 2033.