行业资讯

The Use of GaN RF Switches in High-Power Radio Design

Read benefits of RF Gan switches in high power radio design Microwave_Journal_June22_TagoreTech.pdf The post The Use of GaN RF Switches in High-Power …

Advantages and Applications of GaN Push-Pull Amplifiers

Microwave_Journal_Decemer_2024_TagoreTech.pdf The post Advantages and Applications of GaN Push-Pull Amplifiers appeared first on TagoreTech .

The Release of Upgraded 1200V E-Mode GaN Device

GaNPower is pleased to announce the release of an upgraded version of its 1200V emode GaN packaged as TO247-4. At a...

TagoreTech Appoints Navi Miglani as Director of Sales, Americas to Participate in IMS 2025

Chicago, IL – April 30, 2025 – TagoreTech Inc., a pioneer of high-power GaN-based RF switches and Frontend solutions, today announced the appointment …

Collaborating with Savoy International Group, Wise-integration to Present a SiC 7kW Demoboard for Onboard Charger For Electric Vehicles with WiseWare® Digital Control at PCIM 2025

The Cross-Compatible OBC Enables Flexible, Efficient, And Intelligent Power Systems Across Multiple Wide-Bandgap Platforms Hyeres, France – April 29, …

ALD's Newest SAB MOSFET Reaches New Power Management Standard for Supercapacitors Rated at 3V or Higher

Wise-integration to Showcase Next-Generation GaN Power Solutions at APEC 2025

Two Presentations Will Report Power & Efficiency Improvements, and Innovative Demonstration Boards Will Highlight WiseGan® & WiseWare® Digital Control…

Kinetic Technologies™ Announces New Active-Clamp Current-Mode PWM Controller for Up to 80V Input, 200W Output

KTB2140: Optimized for High Efficiency, Supporting Full Range Power Over Ethernet (PoE) bt and 200W Telecom Applications San Jose, Calif. – March 11, …

Kinetic Technologies™ Announces Integrated Dual MOSFET Bridge Rectifier for Power over Ethernet up to 90W Input​

KTA1170: Fully Compatible with IEEE ® 802.3bt Standard, Improves Powered Device Efficiency up to 2% San Jose, Calif. – March 11, 2025 – Power manageme…

Kinetic Technologies Introduces Novel OptiComp™ Frequency Control Method 2.4MHz, 3A Buck-Switching Regulator

KTB8400: Step-Down Regulator Features Fast Transient Response and Lowest Variation in Switching Frequency for Noise Sensitive Applications San Jose, C…

Kinetic Technologies™ Announces High-Efficiency 6A Step-down Voltage Regulator with I2C Interface​

KTB8375: 4.5V – 24V Input Buck Regulator Combines Ultra-Fast Transient Response with High Efficiency San Jose, Calif. – March 10, 2025 – Kinetic Techn…

Skycore Partners with Cadence to Create Energy-Efficient Data Center ICs

Cadence has published a blog post highlighting our collaboration to develop energy-efficient power ICs for data centers. With AI and...

TagoreTech Appoints Scott Li as Director of Sales, Asia

Chicago, IL –February 15, 2025 – TagoreTech Inc., a pioneer of high-power GaN-based RF switches and frontend solutions, is pleased to announce the app…

Demonstration of parallelization capability of Bluesky120

GaNPower is pleased to announce the successful demonstration of parallelization capability of Bluesky120 (bare die of EMODE GaNFET/IC with rating of..…

Skycore Semiconductors Featured in Cadence's "Designed with Cadence" Video Series

Skycore utilizes Cadence’s software tools to develop advanced integrated circuit technology aimed at improving energy efficiency in data centers. As e…

GaNPower new bare die at 900V 120A/12 mOhm rating

We are pleased to offer a new bare die at 900V 120A/12 mOhm rating. Full chip probe has been performed and...

Astute Group and Wise-integration, a Pioneer in GaN Power Electronics, Announce EMEA Distribution Partnership

Stevenage, UK, [Dec. 13, 2024] – Astute Group, a leading global electronics distributor and supply-chain solutions provider, and Wise-integration, a F…

Skycore Semiconductors Joins Berkeley Power & Energy Center (BPEC)

We are proud to announce that Skycore Semiconductors has joined the Berkeley Power & Energy Center (BPEC) at the University of...

TC3Pak顶部散热封装SiC MOSFET，助力高效高密电源设计 TC3Pak（Topside Cooling D3Pak）顶部散热型、表面贴封装1200V碳化硅（SiC）MOSFET产品，具有漏感小、开关损耗低、散热性强、安装方便等特点。 查看详情

Wise-integration Expands in North America With Ottawa Design Center to Develop Next-Gen WiseGan® Digital Solutions

Canada-based Center Brings Wise-integration Closer to U.S. With ‘Perfect Vehicle to Accelerate GaN Adoption Across Power Conversion Markets’ Hyeres, F…