Taiwan Semiconductor introduces its PerFET 60V MOSFET technology in PDFN56U (5mm × 6mm) single and dual packages for automotive applications requiring high power density and high switching frequency. The portfolio includes 12 devices with both normal-level (10V) and logic-level (5V) gate drive options, offering optimized R DS(on) × Q g performance for a wide range of designs. Based on advanced 60V Shielded Gate Trench (SGT) technology, the PerFET MOSFETs feature low R DS(on) , low gate charge, and fast switching performance, supporting high-efficiency DC/DC converters, motor drives, pumps, fans, and other high-current automotive loads. The PDFN56U wettable flank package supports reliable solder joint inspection and improved AOI capability. Its 5mm × 6mm footprint also offers broad compatibility with commonly used industry-standard packages. Figure1: PDFN56U and PDFN56U Dual package Key Features AEC-Q101 qualified Best-in-class FOM (R DS(on) × Q g ) Optimized R DS(on) for low conduction losses Low gate charge for reduced switching losses 175°C junction temperature (T J ) Wettable flank enhanced AOI accuracy Applications 12V & 24V Automotive applications SMPS, Server and Telecom power supply DC/DC converter BLDC motor driver Product Portfolio Scroll left Part Number V DS (V) R DS(on) @ 10V Max. (mΩ) V GS(TH) (V) I D (A) Q g (nC) @ 10V Package TQM026NH06LCR 60 2.6 1.4 - 2.4 100 76 PDFN56U TQM027NH06CR 2.7 2.4 - 3.6 100 84 TQM037NH06LCR 3.7 1.4 - 2.4 100 54 TQM038NH06CR 3.8 2.4 - 3.6 100 52 TQM050NH06LCR 5 1.4 - 2.4 81 41 TQM052NH06CR 5.2 2.4 - 3.6 81 40 TQM080NH06LCR 8 1.4 - 2.4 54 25 TQM085NH06CR 8.5 2.4 - 3.6 54 24 TQM115NH06LCR 11.5 1.4 - 2.4 49 17 TQM120NH06CR 12 2.4 - 3.6 48 16 TQM130NH06LDCR 13 1.4 - 2.4 40 17.2 PDFN56U Dual TQM130NH06DCR 13 2.4 - 3.6 40 16.2 Facebook LinkedIn Email