Taiwan Semiconductor expands its PerFET automotive MOSFET portfolio with eight new 40V, 80V and 100V devices in the compact PDFN56U (5mm × 6mm) package. The new products are designed for automotive power applications requiring low conduction loss, high current capability, and high-power density. Key features include ultra-low R DS(on) , with values down to 1.1mΩ at 40V, 3.6mΩ at 80V, and 3.5mΩ at 100V, together with both logic-level and normal-level gate drive options. These new devices also adopt Source Clip bonding technology, helping reduce package resistance and increase current capability up to 175A. The higher current capability supports lower conduction loss, improved thermal margin, and higher power handling in demanding applications such as DC/DC converters, motor drives, pumps, fans, and other high-current loads. The PDFN56U wettable flank package supports reliable solder joint inspection and enhanced AOI capability, while its industry-standard 5mm × 6mm footprint enables easy adoption into existing automotive power designs. Figure 1: PDFN56U Package and Internal Source Clip Structure Product Portfolio Scroll left Part Number V DS (V) R DS(on) @ 10V Max. (mΩ) V GS(TH) (V) I D (A) Package TQM011NH04LCR 40 1.1 1.4 - 2.2 175 PDFN56U TQM011NH04CR 1.1 2.4 - 3.6 175 TQM036NH08LCR 80 3.6 1.4 - 2.2 161 TQM038NH08CR 3.8 2.4 - 3.6 161 TQM035NH10LCR 100 3.5 1.4 - 2.2 175 TQM037NH10CR 3.7 2.4 - 3.6 175 TQM043NH10LCR 4.3 1.4 - 2.2 143 TQM045NH10CR 4.5 2.4 - 3.6 141 Facebook LinkedIn Email