Infineon Technologies is supplying Enphase Energy with 900 V gallium nitride (GaN) bidirectional switches for solid-state transformers used in AI data centre power systems. The companies claim the CoolGaN devices are the world’s first monolithic GaN bidirectional switches at this voltage rating, extending the technology into higher-voltage power conversion applications. For eeNews Europe readers working on power electronics, the development highlights how 900 V GaN switches could simplify power conversion architectures as AI infrastructure moves towards higher-voltage DC distribution. The devices offer an alternative to conventional switching arrangements in applications requiring high efficiency and power density. 900 V GaN switches simplify power conversion Infineon’s CoolGaN 900 V monolithic bidirectional switches (BDS) combine bidirectional voltage blocking and current conduction in a single semiconductor device. Unlike conventional power switching arrangements that require multiple devices to achieve bidirectional operation, the integrated design can reduce component count and simplify power conversion stages. The switches retain GaN’s high-frequency operating characteristics, allowing designers to reduce the size of magnetic components while increasing power density. The higher blocking voltage also provides additional flexibility for solid-state transformer architectures supporting the transition towards 800 V and future 1,500 VDC power distribution systems. “The future of power conversion will be enabled by a broad portfolio of semiconductor technologies,” said Adam White, Division President Power Systems at Infineon. “With our new 900 V CoolGaN BDS, we are extending the range of applications where customers can benefit from the efficiency and power density advantages of GaN and bringing the technology into a voltage class that opens new possibilities for high-performance power conversion systems.” Enphase integrates GaN into solid-state transformers Enphase is integrating the devices into its IQ Solid-State Transformer , developed for AI data centres where electrical efficiency, reliability and power density affect infrastructure operating costs. Solid-state transformers use power electronics to perform voltage conversion and power management, offering an alternative to conventional transformer-based distribution architectures. According to Enphase, moving to 900 V enables additional voltage headroom while potentially eliminating conversion stages and reducing the number of components in the power path. The collaboration builds on the companies’ earlier work with 650 V GaN bidirectional switches used in Enphase IQ9 microinverters . Applications beyond AI infrastructure The 900 V devices could also support three-phase commercial solar inverter designs operating at 480 V in the United States and 400 V in other markets. Infineon and Enphase expect the higher voltage rating and integrated bidirectional functionality to enable designs with fewer switches, lower conversion losses and reduced system costs. Enphase led the system-level development and demonstration, supported by Infineon’s device technology and engineering expertise. The 900 V GaN switches have completed initial testing and are being integrated into Enphase’s solid-state transformer development programme. Production qualification is expected to follow, although the companies have not announced a timetable for commercial availability. The post Infineon and Enphase develop 900 V GaN switches for AI data centres appeared first on eeNews Europe .