英飞凌· 2026-10-27 16:44(北京时间) ·重要度 13

Infineon to establish the world’s first high-volume manufacturing facility for gallium nitride power semiconductors on 300-millimeter wafers in Europe

英飞凌 英文
本站仅提供摘要,完整内容请阅读原文(版权归原媒体所有)
https://www.infineon.com/press-release/2026/infpr202610-021
阅读原文 ↗